A master thesis was discussed in Department of Electrical Engineering / College of Engineering / University of Mosul entitled "Study and design of high frequency class E and class F power amplifiers for third generation mobile communication" submitted by postgraduate student (Zahraa Muhammad Younis Saed Islam), supervised by Prof. Dr. Khaled Khalil Muhammad on Monday, Nov. 29, 2021.

The thesis included a class E and a class F  Power Amplifiers are designed for LTE mobile communication with a single GaAs FET transistor at the frequency (1800MHz) using the Advanced Design System (ADS) software.

The single transistor class E PA shows a maximum Power Added Efficiency (PAE) of 80.771% with an output power of 30.555dBm, and the maximum gain of 10.251dB at an output  power of 27.715 dBm, The harmonic power levels of the power amplifier circuit utilized for a single tone were kept below -60dBc throughout the output power range of 18 to 30dBm using the single tone circuit , The amount of distortion produced by IMD3 and IMD5 less than (-13dBc) (-24dBc) respectively, when testing the two tone . A Feedforward linearization type of linearization technique is tested in order to improve the linearity of the designed class E PA. The ACPR less than -45dBc and the PAPR equal 5.64dB at output power 32dBm.

The single transistor class F PA shows a maximum Power Added Efficiency (PAE) of 76.799% with an output power of 28.007dBm, and the maximum gain of 9.445dB at an output  power of 24.445 dBm, The harmonic power levels of the power amplifier circuit utilized for a single tone were kept below -40dBc throughout the output power range of 18 to 30dBm using the single tone circuit , The amount of distortion produced by IMD3 and IMD5 less than (-20dBc) (-40dBc) respectively, when testing the two tone . A Feedforward linearization type of linearization technique is tested in order to improve the linearity of the designed class F PA. The ACPR less than -40dBc and PAPR equal 6.156dB at output power 33.05dBm.

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